GaAs Transistors

DC-40 GHz GaAs pHEMT discrete transistors - super low noise figure for high-performance receiver front-ends

GaAs Transistors Series Overview

UMS GaAs pHEMT discrete transistors offer super low noise figure performance for high-performance receiver front-end applications. Covering DC to 40 GHz with noise figure below 0.8 dB and gain of 14 dB, these devices are ideal for low-noise amplifier stages in radar receivers, satellite communication payloads, and test & measurement systems where signal integrity is paramount.

EC
2612

EC2612-99F

40GHz Super Low Noise pHEMT (Die) - DC-40 GHz, NF < 0.8 dB, Gain 14 dB

Frequency DC-40 GHz Gain 14 dB NF 0.8 dB Case Die

Datasheet RFQ

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Our technical team is familiar with UMS GaAs pHEMT transistors and can recommend the optimal device based on your frequency, noise figure, and gain requirements for receiver front-end designs.

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