News

TMT, in partnership with UMS (France), has completed its annual product line expansion with 12 new GaN power amplifier and broadband amplifier MMICs. Covering Ka-band and W-band frequency ranges with output power up to 50W, these new products further expand TMT's RF solutions portfolio for defense and space applications. All new products have completed incoming inspection and parameter verification at TMT's Hong Kong warehouse.

TMT Enterprise Development Co has signed a strategic cooperation agreement with Nanjing Feng Yue Electronic Technology Co., Ltd., formally establishing an export partnership framework. Both parties will jointly promote the overseas market expansion of domestic RF devices and precision electronic assemblies, with a focus on communication and test & measurement application requirements in the Asia-Pacific and European regions.

TMT will exhibit at the Asia Microwave Symposium 2026 in Shanghai this September, showcasing the latest UMS GaAs/GaN MMIC products and the full Southwest Microwave connector product line. Our technical team will be on-site to provide product consultations and application solution discussions. Visit our booth to learn more about our RF solutions for defense, space, and telecom applications.

TMT Enterprise Development Co has renewed its authorized distribution agreement with UMS (United Monolithic Semiconductors), a leading French III-V compound semiconductor manufacturer. Building on years of collaboration, TMT has now become one of UMS's most important partners in the Asia-Pacific region. This partnership enables TMT to offer the full UMS product portfolio - including GaAs and GaN MMICs from DC to 105 GHz - to customers across the Asia-Pacific region, backed by direct factory technical support and priority supply assurance.

TMT participated in the Electronic Design Innovation Conference (EDI CON) 2024 in Beijing, showcasing UMS GaAs/GaN MMIC products and Southwest Microwave precision connector solutions. The TMT technical team engaged with RF design engineers, system integrators, and academic researchers, presenting application-specific solutions for defense radar, satellite communications, and 5G test & measurement. This marked TMT's debut at a major industry event, establishing early market presence in China's RF and microwave community.

UMS has updated the datasheet for the CHA5659-98F, a four-stage monolithic GaAs high-power amplifier delivering 1.3 W output power with high linearity, gain control, and integrated power detector. ESD protections are included. Designed for point-to-point radio and Q-band SatCom applications, it is recommended with the CHA3398-98F as a driver. The circuit is manufactured with a pHEMT process.

Main Modifications:

• PAD reference specified (pages 13 and 14)
• Tamb and Tb chip terminology unified to Tbackside
• New EVB evaluation board update (replaces former ADG board)
• Table of MR, ROR updated (page 3)
• Modification of thermal performance information text
• AN0030 added

Main Features:

• Broadband performance: 36-43.5 GHz
• Saturated power: 31 dBm
• OIP3: 38 dBm
• Gain: 22 dB
• Gain control: up to 15 dB
• DC bias: Vd = 6.0V @ Idq = 0.8A
• Chip size: 3.60 × 3.00 × 0.07 mm

UMS has released a new Ka-band (26-40 GHz) GaN high-power amplifier series with output power ranging from 10W to 50W. Manufactured using a 0.15μm GaN-on-SiC process, these amplifiers support both pulsed and continuous wave operation modes, and are designed specifically for satellite uplink and phased-array radar transmitter applications. TMT has completed initial inventory stocking and parameter verification for these products.

Southwest Microwave has expanded its product line with 1.0mm interface end-launch connectors, covering frequencies from DC to 125 GHz. Designed specifically for W-band MMIC evaluation and millimeter-wave test fixtures, these connectors feature insertion loss below 0.5 dB and return loss better than 15 dB. (1.0mm connector series rated to 110 GHz; End Launch products extend to 125 GHz.) TMT is now accepting RFQs and orders for this series.

Southwest Microwave has introduced the new 1.35 mm (E) connector series for E-band applications up to 90 GHz. The series includes vertical launch (22359-001J), end launch, and precision adapters - including the between-series 1.35 mm to 1.0 mm adapter (222410-00SF) enabling seamless integration with existing W-band test setups. TMT is now accepting RFQs and sample orders for the full 1.35 mm series.

UMS has updated its E-band (71-86 GHz) LNA reference design, improving noise figure from 2.2 dB to 1.8 dB by optimizing the matching network and bias solution, while maintaining 25 dB gain. The updated reference design PCB files and parameter report have been published and are available through the TMT technical team upon request.

This guide systematically reviews the selection methodology for UMS's 275+ MMIC products across seven dimensions: frequency range, noise figure, output power, gain, linearity, operating voltage, and package type. It helps engineers quickly narrow down candidate products and make optimal selections for their specific applications. Download the complete selection guide via our contact page.

The performance of Southwest end-launch connectors depends heavily on PCB design quality. This article details the PCB stack-up, pad dimensions, via layout, and soldering process parameters required for end-launch connector installation, ensuring that the insertion loss and return loss performance specified in the datasheets is achieved in actual applications.

The ESA European Preferred Parts List (EPPL) certification is one of the highest qualification standards for space components. This article explains the EPPL certification process, the ESCC quality grade system, wafer-level and package-level screening requirements, and how to obtain technical documentation and procurement support for EPPL-certified products through TMT.