GaN Power Transistors
GaN-on-SiC power transistors on 0.5 μm / 0.25 μm process covering S to Ku band with 10-250 W output power - bare die and packaged products available
GaN Power Transistors Overview
UMS GaN Power Transistors are built on a GaN-on-SiC process platform, offering 0.5 μm and 0.25 μm gate-length options, covering S- through Ku-Band with single-chip output power up to 250 W. Products are available as bare die or metal-ceramic packaged devices. Bare die options enable customer packaging and power combining, while packaged products are ready for PCB or waveguide cavity integration. GaN technology delivers high power density and efficiency, significantly reducing the size and weight of radar transmitters and communication power amplifiers while improving system reliability.
This page covers two UMS Product Finder functions:
GaN Power Transistor (CHK/CHKA) - 12 SKU, bare die and packaged high-power transistors | Internally Matched GaN Power Transistor (CHZ) - 4 SKU, 50Ω internally matched for easy PCB integration
015
CHK015AaQIA
15W Power Packaged Transistor
8101
CHK8101-SYC
15W Power Packaged Transistor
8201
CHK8201-SYA
45W GaN packagedPower bar
011
CHKA011aSXA
130W Power Packaged Transistor
012
CHKA012bSYA
130W Power Packaged Transistor
8012
CHZ8012-QJA
S-Band 12W GaN High Power Amplifier
9012
CHZ9012-QFA
S-Band 60W GaN High Power Amplifier
Need Help Selecting GaN Transistors?
Our technical team is familiar with the full line of UMS GaN Power Transistors and can recommend the optimal solution based on your frequency, power, and efficiency requirements, and assist with power combining design.
Contact Our Technical Team