Technologies

Technology for RF and mm-wave Applications

Technology for RF and mm-wave Applications

At UMS, we provide designers with dependable, high-performance GaAs and GaN process technologies. Our platforms have been validated through the successful deployment of numerous standard products across key sectors including Defence, Aerospace, Telecommunications, Automotive, and ISM applications.

Our advanced GaN HEMT, GaAs pHEMT, HBT, MESFET, Schottky diode, and passive component technologies—manufactured on a high-throughput 4-inch production line—are available in open foundry mode. This enables our customers to develop and fabricate their own low-noise or high-power MMIC solutions with full design autonomy.

UMS Technologies

Technologies Suitable for Space Flight Models

Most of our GaAs and GaN technologies, available in foundry mode, are space evaluated and listed within the European Space Agency’s (ESA) European Preferred Part List (EPPL).

UMS Technologies

Open Processes

Key parameters and characteristics for UMS open technologies are summarised below.

UMS Open Process Technologies Table

Process Datasheets

GaAs pHEMT Power

PPH15X-20 →

PPH25 →

GaAs HBT

HB20M →

GaAs MESFET & Schottky

HP07 (MESFET) →

BES (Schottky) →

More Information on Our Technologies

For more information on our technologies, including process selection guidance, PDK access, and technical specifications, please fill out the form below. Our team will connect you with UMS technical specialists to discuss your specific requirements.

UMS Foundry Technologies

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