GaN-on-SiC Foundry Process
0.15 μm and 0.25 μm gate length - high power density, DC to 40 GHz
UMS GaN-on-SiC Process
In-house developed GaN-on-SiC HEMT technology for high-power RF and microwave MMICs
UMS offers production-release GaN-on-SiC HEMT foundry processes in both 0.25 μm and 0.15 μm gate length options. GaN-on-SiC combines the high breakdown voltage and power density of GaN with the excellent thermal conductivity of SiC substrates, making it the ideal technology for high-power amplifiers operating from HF through Ka band. Both processes are space-qualified and listed on the ESA EPPL.
Process Options
Two gate length options for power applications
0.25 μm GaN HEMT
Frequency: DC to 18 GHz
VDS: 28 V typical, 40 V optional
Application: S/C band power amplifiers, radar T/R modules
PAE: Up to 60% at 10 GHz
0.15 μm GaN HEMT
Frequency: DC to 40 GHz
VDS: 28 V typical, 40 V optional
Application: X/Ku/Ka band PAs, satcom HPA
PAE: Up to 45% at 30 GHz
Technology Advantages
High Power Density: 3-5 W/mm output power capability
Thermal: SiC substrate with 490 W/m·K thermal conductivity
High Voltage: 28-40 V operation for simplified power supply
Broadband: Low knee voltage, excellent gain to 40 GHz
Process Features
Complete GaN-on-SiC process stack for high-power MMIC design
GaN HEMT Active
0.25 μm and 0.15 μm gate length options. ft up to 60 GHz (0.15 μm). High breakdown voltage (>40 V). Optional power HBT for driver stages.
Passive Elements
Thin-film NiCr resistors, MIM capacitors (up to 400 pF/mm²), spiral inductors with air-bridge, and CPW transmission lines. SiC substrate provides low-loss RF grounding.
Thermal Management
SiC substrate thermal conductivity of 490 W/m·K - 3× better than GaAs. Optional wafer thinning (100 μm, 50 μm) and backside metallization for enhanced thermal dissipation.
Large-Signal Models
Angelov and ANF models provided in PDK. Large-signal models characterized for power, PAE, and intermodulation performance. Enables accurate load-pull and power amplifier design.
Applications
Where GaN-on-SiC delivers the most impact
Radar T/R Modules
High-power transmit chains and low-noise receive chains integrated in a single MMIC. GaN PA for transmit, GaAs LNA for receive - both available on UMS processes.
Satcom HPAs
Ku/Ka band high-power amplifiers for satellite communication transmitters. Output power 10-200 W with excellent PAE for reduced DC power consumption.
Electronic Warfare
Wideband jammers and electronic attack systems. GaN's high power density enables compact, high-efficiency jamming transmitters covering multiple octaves.
Ready to design with GaN-on-SiC?
Contact TMT to request PDK access and technical support for your GaN MMIC project.
Foundry Inquiry